IPD04N03LA G Infineon Technologies, IPD04N03LA G Datasheet - Page 3

• Manufacturer Part Number: IPD04N03LA G
• Description: MOSFET N-CH 25V 50A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD04N03LA G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 80µA
• Gate Charge (qg) @ Vgs: 41nC @ 5V
• Input Capacitance (ciss) @ Vds: 5199pF @ 15V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD04N03LA; IPD04N03LAG; IPD04N03LAGINTR; IPD04N03LAGXT; IPD04N03LAGXT; IPD04N03LAINTR; IPD04N03LAINTR; SP000017598

Rev. 1.99
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DS
GS
DD
GS
R
=25 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=15 V, V
=15 V, I
=0 to 5 V
=0 to 5 V
=15 V, V
=0 V, I
F
F
G
DS
=50 A,
=I
D
=2.7 Ω
GS
GS
=25 A,
=15 V,
S
=10 V,
=0 V
,
IPS04N03LA G
IPD04N03LA G
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3909
1488
0.89
typ.
174
6.6
6.3
8.1
3.0
14
11
44
12
14
31
28
32
-
-
-
IPU04N03LA G
IPF04N03LA G
max.
5199
1979
261
350
8.3
1.2
21
16
66
10
16
12
19
41
37
43
50
15
-
Unit
pF
ns
nC
V
nC
A
V
nC
2008-04-11