BSO301SP Infineon Technologies, BSO301SP Datasheet - Page 5

• Manufacturer Part Number: BSO301SP
• Description: MOSFET P-CH 30V 12.6A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO301SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 136nC @ 10V
• Input Capacitance (ciss) @ Vds: 5890pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14.9 A
• Power Dissipation: 1790 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: BSO301SPINTR

Rev. 1.31
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
60
50
40
30
20
10
60
50
40
30
20
10
DS
GS
0
0
); T
0
0
); |V
-10 V
j
=25 °C
j
GS
DS
-4.5 V
|>2|I
1
D
-3.5 V
|R
1
DS(on)max
-V
-V
C °150
DS
GS
2
[V]
[V]
C °25
2
3
-2.3 V
-2.7 V
-3.2 V
-2.5 V
-3 V
page 5
3
4
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
25
20
15
10
60
40
20
D
=f(I
5
0
0
); T
0
0
D
2.5
j
); T
=25 °C
GS
j
=25 °C
10
2.7
10
-I
-I
D
D
20
[A]
[A]
20
BSO301SP H
3.0
30
4.5
3.2
3.5
10
2010-02-08
40
30