BSO203SP Infineon Technologies, BSO203SP Datasheet
BSO203SP
Specifications of BSO203SP
SP000012579
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BSO203SP Summary of contents
Page 1
... V =-16V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 Symbol puls E AS dv/dt =150°C jmax tot stg Page 1 BSO203SP Product Summary V - DS(on Top View SIS00062 Value -9 -7.2 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSO203SP Values Unit min. typ. max K 110 - - 53 Values Unit min. typ. max. - -0.6 ...
Page 3
... C f=1MHz oss C rss t V =-10V, V =-4.5V d(on =-1A, R =6Ω d(off =-15V =-15V, I =-9A -4. (plateau) V =-15V =25° = =-10V /dt=100A/µ Page 3 BSO203SP Values Unit min. typ. max 2265 - pF - 890 - - 728 - - 15 104 - -3.8 -5 -15.6 -23.4 - -33.6 -50 -36 - -0.82 -1. 16 2004-06-03 ...
Page 4
... D DS parameter : ° BSO203SP - -10 0 - -10 -10 Rev.1.2 2 Drain current parameter: |V -10 A °C 100 120 160 Transient thermal impedance Z thJS parameter : K 120.0µ - Page 4 BSO203SP ) A |≥ 4 BSO203SP - 100 = BSO203SP single pulse - 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2004-06-03 ...
Page 5
... 0.5 1 1.5 Rev.1.2 6 Typ. drain-source on resistance R DS(on) parameter: V 0.05 Ω Vgs = -3V 0.03 Vgs = -2.5V 0.02 Vgs = -2V 0. Typ. forward transconductance | f(I DS(on)max fs parameter µ Page 5 BSO203SP = Vgs = -2.5V Vgs = - =25° Vgs= - 3.5V Vgs = - 4V Vgs = - 4.5V Vgs Vgs = - 10V 2004-06-03 ...
Page 6
... Forward character. of reverse diode parameter -10 C iss -10 C oss C -10 rss - Page 6 BSO203SP = 1 0.5 0 -60 - µ BSO203SP °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 98% typ. 2% 100 °C 160 2004-06-03 ...
Page 7
... Drain-source breakdown voltage (BR)DSS j BSO203SP -24.5 V -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 - Rev.1.2 14 Typ. gate charge |V GS parameter: I 100 °C 150 T j 100 °C 180 T j Page Gate = -9 A pulsed 0.2 VDS max. 7 0.5 VDS max. 0.8 VDS max BSO203SP Gate | 2004-06-03 ...
Page 8
... Rev.1.2 Page 8 BSO203SP 2004-06-03 ...