SPA11N60C3 Infineon Technologies, SPA11N60C3 Datasheet - Page 7
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SPA11N60C3
Manufacturer Part Number
SPA11N60C3
Description
MOSFET N-CH 650V 11A TO220FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPI11N60C3.pdf
(16 pages)
Specifications of SPA11N60C3
Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
33W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
33000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
11A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
380mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Fall Time
5 ns
Rise Time
5 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000013664
SP000216312
SPA11N60C3IN
SPA11N60C3X
SPA11N60C3XTIN
SPA11N60C3XTIN
SP000216312
SPA11N60C3IN
SPA11N60C3X
SPA11N60C3XTIN
SPA11N60C3XTIN
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPA11N60C3
Manufacturer:
INFINEON
Quantity:
5 000
Company:
Part Number:
SPA11N60C3
Manufacturer:
INF
Quantity:
5 510
Company:
Part Number:
SPA11N60C3
Manufacturer:
FSC
Quantity:
5 000
Part Number:
SPA11N60C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
SPA11N60C3XKSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
9 Typ. drain-source on resistance
R
parameter: T
11 Typ. transfer characteristics
I
parameter: t
D
Rev.
DS(on)
= f ( V
Ω
1.6
1.4
1.2
0.8
0.6
0.4
A
40
32
28
24
20
16
12
2
1
8
4
0
0
0
=f(I
GS
3.2
2
4V
D
); V
2
p
)
j
=150°C, V
4
= 10 µs
4.5V
DS
4
6
≥ 2 x I
25°C
5V
6
8
GS
D
10
8
x R
12
5.5V
6.5V
8V
20V
DS(on)max
10
14
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
150°C
12
16
6V
V
I
V
A
D
GS
15
20
Page 7
10 Drain-source on-state resistance
R
parameter : I
12 Typ. gate charge
V
parameter: I
GS
DS(on)
Ω
2.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= f (Q
V
16
12
10
1
0
8
6
4
2
0
-60
0
SPP11N60C3
SPP11N60C3
= f (T
Gate
10
-20
D
D
j
)
= 11 A pulsed
= 7 A, V
)
20
20
98%
0,2
30
typ
V
GS
60
DS max
40
= 10 V
SPP11N60C3
100
0,8 V
50
2009-11-27
DS max
°C
nC
T
Q
j
Gate
180
70