SPP35N10 Infineon Technologies, SPP35N10 Datasheet - Page 4

• Manufacturer Part Number: SPP35N10
• Description: MOSFET N-CH 100V 35A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP35N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 83µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1570pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000013851; SPP35N10IN; SPP35N10X; SPP35N10XTIN; SPP35N10XTIN

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
Rev. 2.1
tot
= f ( V
= f ( T
10
10
10
10
160
120
100
W
A
80
60
40
20
0
3
2
1
0
10
0
SPP35N10
SPP35N10
DS
-1
C
20
)
)
40
10
0
60
80 100 120 140 160
C
= 25 °C
10
1
DC
t p = 2.5µs
10
10 µs
100 µs
1 ms
10 ms
2
T
V
°C
V
C
DS
190
10
3
Page 4
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJC
= f ( T
K/W
10
10
10
10
10
10
A
38
32
28
24
20
16
12
= f ( t
-1
-2
-3
-4
8
4
0
1
0
10
0
C
SPP35N10
SPP35N10
-7
)
20
p
10
)
single pulse
GS
-6
40


10
p
60
10 V
/ T
-5
80 100 120 140 160
10
-4
10
-3
10
2005-02-14
-2
SPP35N10
D = 0.50
SPI35N10
0.20
0.10
0.05
0.02
0.01
T
t
s
p
°C
C
190
10
0