BSS192E6327 Infineon Technologies, BSS192E6327 Datasheet - Page 7

• Manufacturer Part Number: BSS192E6327
• Description: MOSFET P-CH 240V 150MA SOT-89
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS192E6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 130pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Gate Charge (qg) @ Vgs: -
• Other names: BSS192; BSS192INTR

Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Semiconductor Group
C
DS (on)
DS (on)
10
10
10
10
pF
50
40
35
30
25
20
15
10
5
0
-60
3
2
1
0
0
DS
= ( T
)
D
-5
j
GS
)
= -0.15 A, V
-20
=0V, f = 1 MHz
-10
20
-15
98%
typ
-20
GS
60
= -10 V
-25
100
-30
T
°C
V
V
j
C
C
C
DS
iss
oss
rss
160
-40
7
Gate threshold voltage
V
parameter: V
V
Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
I
GS (th)
F
= ( V
-10
-10
-10
-10
-4.6
-4.0
-3.6
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
A
V
-1
-2
-3
-60
0
0.0
SD
= ( T
)
-0.4
j
j
GS
, t
)
-20
p
= V
= 80 µs
-0.8
DS
20
-1.2
, I
T
T
T
T
D
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
98%
typ
2%
= -1 mA
-1.6
60
-2.0
100
-2.4
18/02/1997
BSS 192
T
V
°C
j
SD
V
-3.0
160