BSS131E6327 Infineon Technologies, BSS131E6327 Datasheet - Page 6

• Manufacturer Part Number: BSS131E6327
• Description: MOSFET N-CH 240V .11A SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS131E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 110mA
• Vgs(th) (max) @ Id: 1.8V @ 56µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 77pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS131; BSS131E6327XT; BSS131INTR; BSS131XTINTR; BSS131XTINTR; SP000011168

Rev. 2.2
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
50
40
30
20
10
DS
=f(T
0
3
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
-20
=0.1 A; V
10
20
98 %
GS
V
T
=10 V
DS
j
[°C]
60
[V]
20
typ
j
=25°C
100
30
140
Coss
Ciss
Crss
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
2.4
1.6
1.2
0.8
0.4
10
=f(T
SD
2
0
-1
-2
-3
0
-60
)
0
j
); V
D
j
0.4
DS
-20
=V
0.8
GS
150 °C
; I
20
D
1.2
=56 µA
150 °C, 98%
V
T
SD
j
25 °C
[°C]
1.6
60
[V]
25 °C, 98%
98 %
typ
2 %
2
100
2.4
2009-08-18
BSS131
140
2.8