SPW20N60C2 Infineon Technologies, SPW20N60C2 Datasheet - Page 5

• Manufacturer Part Number: SPW20N60C2
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW20N60C2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5.5V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW20N60C2IN

1 Power dissipation
P
3 Transient thermal impedance
Z
parameter: D = t
thJC
tot
K/W
10
10
10
10
= f (T
10
240
200
180
160
140
120
100
W
80
60
40
20
= f (t
-1
-2
-3
-4
0
0
10
0
SPW20N60C2
-7
C
p
20
)
10
)
-6
40
10
p
/T
-5
60
10
-4
80
10
100
-3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
120
-2
°C
T
t
s
C
p
Final data
160
10
Page 5
0
2 Safe operating area
I
parameter : D = 0 , T
4 Typ. output characteristic
I
parameter: t
D
D
= f ( V
= f (V
10
10
10
10
10
A
A
75
60
55
50
45
40
35
30
25
20
15
10
-1
-2
5
0
2
1
0
10
0
DS
DS
0
); T
)
p
5
= 10 µs, V
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
j
=25°C
20V
15V
12V
11V
10
10
1
C
=25°C
15
GS
10V
9V
8V
7V
SPW20N60C2
10
20
2002-08-12
2
V
V
V
V
DS
DS
10
30
3