BUZ80A Infineon Technologies, BUZ80A Datasheet - Page 4

• Manufacturer Part Number: BUZ80A
• Description: MOSFET N-CH 800V 3.6A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ80A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ80AIN

Electrical Characteristics, at T
Semiconductor Group
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
C
C
GS
R
R
= 25 °C
= 25 °C
= 100 V, I
= 100 V, I
= 0 V, I
F
F =
F =
= 6.2 A
l
l
S,
S,
d i
d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
j
= 25°C, unless otherwise specified
Symbol
I
I
V
t
Q
4
S
SM
rr
SD
rr
min.
-
-
-
-
-
Values
typ.
-
-
1
370
2.5
max.
-
-
3.6
14.5
1.3
BUZ 80 A
09/96
Unit
A
V
ns
µC