2SK2614(Q) Toshiba, 2SK2614(Q) Datasheet - Page 5
![MOSFET N-CH 50V 20A 2-7B1B](/photos/5/62/56212/2sk2614_sml.jpg)
2SK2614(Q)
Manufacturer Part Number
2SK2614(Q)
Description
MOSFET N-CH 50V 20A 2-7B1B
Manufacturer
Toshiba
Datasheet
1.2SK2614TE16L1Q.pdf
(6 pages)
Specifications of 2SK2614(Q)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
2-7B1B
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.046 Ohms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SK2614(Q)
2SK2614Q
2SK2614Q
300
100
0.5
0.3
0.1
50
30
10
5
3
1
0.3
I D max (continuous)
I D max (pulse)*
* Single pulse
Curves must be derated linearly
with increase in temperature.
Tc=25
DC OPERATION
T
1
Drain-source voltage V DS (V)
°C
a
SAFE OPERATING AREA
=25°C
3
1 ms*
10
V DSS max
100 μs*
30
SINGLE PULSE
100
300
Pulse width t
5
w
(s)
2009-12-21
2SK2614