2SK2614(Q) Toshiba, 2SK2614(Q) Datasheet - Page 5

• Manufacturer Part Number: 2SK2614(Q)
• Description: MOSFET N-CH 50V 20A 2-7B1B
• Manufacturer: Toshiba

Specifications of 2SK2614(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: 2-7B1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.046 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK2614(Q); 2SK2614Q

300
100
0.5
0.3
0.1
50
30
10
5
3
1
0.3
I D max (continuous)
I D max (pulse)*
* Single pulse
Curves must be derated linearly
with increase in temperature.
Tc=25
DC OPERATION
T
1
Drain-source voltage V DS (V)
°C
a
SAFE OPERATING AREA
=25°C
3
1 ms*
10
V DSS max
100 μs*
30
SINGLE PULSE
100
300
Pulse width t
5
w
(s)
2009-12-21
2SK2614