2SK2614(Q) Toshiba, 2SK2614(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK2614(Q)
• Description: MOSFET N-CH 50V 20A 2-7B1B
• Manufacturer: Toshiba

Specifications of 2SK2614(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: 2-7B1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.046 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK2614(Q); 2SK2614Q

100
20
16
12
50
40
30
20
10
50
30
10
8
4
0
0
5
3
1
0
0
1
Common source
Common source
Tc = 25°C
Pulse test
V
Pulse test
Common source
V DS = 10 V
Pulse test
DS
= 10 V
Drain-source voltage V DS
0.2
Gate-source voltage V GS
2
Tc = −55°C
3
Drain current I D (A)
5
0.4
4
I
I
|Y
15
D
D
10
fs
– V
– V
10
| – I
8
100
Tc = −55°C
DS
GS
D
0.6
6
25
30
100
(V)
(V)
25
V GS = 3 V
0.8
6
8
50
5
3.5
4
100
1.0
10
3
0.05
0.03
0.01
2.0
1.6
1.2
0.8
0.4
0.5
0.3
0.1
50
40
30
20
10
0
0
1
0
0
1
Common source
Tc = 25°C
Pulse test
10
15
Drain-source voltage V DS
Gate-source voltage V GS
2
4
3
8
Drain current I D (A)
5
6
R
V
DS (ON)
4
8
V GS = 4 V
I
DS
D
5
– V
10
– V
DS
4.5
GS
– I
12
6
D
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
4
30
V GS = 3 V
3.5
(V)
(V)
10
16
8
I D = 25 A
50
12
2009-12-21
6
2SK2614
100
10
20