HAT2200R Renesas Electronics America, HAT2200R Datasheet - Page 6

• Manufacturer Part Number: HAT2200R
• Description: MOSFET N-CH 100V 8A 8-SOP
• Manufacturer: Renesas Electronics America

Specifications of HAT2200R

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8A
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Vgs(th) (max) @ Id: -

HAT2200R
Rev.2.00, Apr.05.2004, page 4 of 7
100
250
200
150
100
20
50
10
50
40
30
20
10
50
-25
2
Static Drain to Source on State Resistance
0.1
0
V
Pulse Test
I
D
V
DS
Reverse Drain Current
GS
= 8 A
0
10 V
Case Temperature
Dynamic Input Characteristics
= 8 V
Body–Drain Diode Reverse
10
Gate Charge
25
1
vs. Temperature
Recovery Time
V
20
DS
50
di/dt = 100 A/µs
V
= 100 V
GS
V
1 A, 2 A, 5 A
= 0, Ta = 25°C
I
75
DS
50 V
25 V
D
30
= 1 A, 2 A, 5 A
= 100 V
10
Qg (nC)
100
50 V
25 V
Tc
I
DR
40
125 150
(°C)
(A)
V
100
GS
50
20
16
12
8
4
0
10000
3000
1000
1000
300
100
100
100
30
10
10
10
1
1
0.1
0.1
0
V
f = 1 MHz
Drain to Source Voltage V
GS
Forward Transfer Admittance vs.
0.3
t r
= 0
10
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
Drain Current I
Tc = –25°C
t f
1
1
75°C
Drain Current
20
V
Rg = 4.7 , duty < 1 %
GS
t d(on)
= 10 V, V
3
t d(off)
30
25°C
10
10
I
D
V
Pulse Test
D
DS
DS
(A)
(A)
40
DS
= 10 V
= 30 V
30
Coss
Crss
Ciss
(V)
100
100
50