HAT2200R Renesas Electronics America, HAT2200R Datasheet - Page 5

• Manufacturer Part Number: HAT2200R
• Description: MOSFET N-CH 100V 8A 8-SOP
• Manufacturer: Renesas Electronics America

Specifications of HAT2200R

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8A
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Vgs(th) (max) @ Id: -

HAT2200R
Main Characteristics
Rev.2.00, Apr.05.2004, page 3 of 7
250
200
150
100
4.0
3.0
2.0
1.0
20
16
12
50
8
4
0
0
0
Drain to Source Saturation Voltage vs.
Test Condition :
Drain to Source Voltage
Gate to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Ambient Temperature
Typical Output Characteristics
6 V
2
10 V
Gate to Source Voltage
50
5
4
100
10
6
Pulse Test
Pulse Test
150
15
I
V
V
Ta (°C)
D
GS
DS
= 5 A
8
5.8 V
5.6 V
(V)
(V)
2 A
1 A
200
20
10
0.001
0.01
100
100
0.1
50
20
10
10
20
16
12
1
8
4
5
2
1
Static Drain to Source on State Resistance
0.1 0.3
0
1
Operation in
this area is
limited by R
Ta = 25°C
1 shot Pulse
Pulse Test
Drain to Source Voltage
Note 5 :
V
Pulse Test
Gate to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm)
DS
Maximum Safe Operation Area
Typical Transfer Characteristics
= 10 V
Tc = 75°C
2
Drain Current
1
vs. Drain Current
DS(on)
3
4
10 30
10
6
25°C
V
I
–25°C
D
GS
100
V
V
(A)
= 8 V
DS
GS
10 µs
10 V
8
300 1000
(V)
(V)
100
10