STB21NM60N-1 STMicroelectronics, STB21NM60N-1 Datasheet - Page 13

• Manufacturer Part Number: STB21NM60N-1
• Description: MOSFET N-CH 600V 17A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB21NM60N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5728

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Dim
A1
b1
c2
e1
L1
L2
A
D
E
b
c
e
L
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
TO-262 mechanical data
mm
Typ
10.40
Max
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
Package mechanical data
inch
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
Max
13/18