STP14NK60Z STMicroelectronics, STP14NK60Z Datasheet - Page 3

• Manufacturer Part Number: STP14NK60Z
• Description: MOSFET N-CH 600V 13.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP14NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2220pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z
1
Electrical ratings
Table 1.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 2.
V
Symbol
R
Symbol
dv/dt
ESD(G-S)
R
I
V
SD
thj-case
P
V
DM
V
V
T
thj-a
DGR
T
T
I
I
TOT
ISO
GS
DS
stg
D
D
≤ 13.5A, di/dt ≤ 200A/µs, V
l
J
(2)
(3)
Absolute maximum ratings
Thermal data
Thermal resistance junction-case Max
Thermal resistance junction-ambient
Max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C= 100pF, R=
1.5kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
DD
Parameter
Parameter
≤ V
(BR)DSS
C
GS
= 25°C
GS
= 20KΩ)
, T
= 0)
j
≤ T
JMAX
C
C
=100°C
= 25°C
.
TO-220/D²PAK/I²PAK
TO-220/D²PAK/I²PAK
TO-247
TO-247
0.78
62.5
13.5
1.28
160
8.5
54
--
-55 to 150
Value
Value
4000
300
± 30
600
600
4.5
Electrical ratings
TO-220FP
TO-220FP
13.5
8.5
54
2500
0.32
40
3.1
50
(1)
(1)
(1)
W/°C
°C/W
°C/W
Unit
V/ns
Unit
°C
W
°C
V
V
V
A
A
A
V
V
3/19