IRF6621 International Rectifier, IRF6621 Datasheet - Page 8

• Manufacturer Part Number: IRF6621
• Description: MOSFET N-CH 30V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6621

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 17.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1460pF @ 15V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DirectFET™ Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET™ Part Marking
8
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MIN
3.70
2.75
0.35
0.48
0.78
0.88
0.78
N/A
0.93
2.00
0.59
0.03
0.08
4.75
METRIC
DIMENSIONS
MAX
N/A
4.85
3.95
2.85
0.45
0.52
0.82
0.92
0.82
0.97
2.10
0.70
0.08
0.17
0.187
0.146
0.108
0.014
0.019
0.031
0.035
0.031
N/A
0.037
0.079
0.023
0.001
0.003
MIN
IMPERIAL
N/A
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
0.038
0.083
0.028
0.003
0.007
MAX
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