IRF6621 International Rectifier, IRF6621 Datasheet - Page 5

• Manufacturer Part Number: IRF6621
• Description: MOSFET N-CH 30V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6621

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 17.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1460pF @ 15V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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1000
100
60
50
40
30
20
10
10
0
1
25
0.4
T J = 150°C
T J = 25°C
T J = -40°C
V SD , Source-to-Drain Voltage (V)
50
0.6
T C , Case Temperature (°C)
75
0.8
Fig 14. Maximum Avalanche Energy Vs. Drain Current
100
1.0
60
50
40
30
20
10
0
V GS = 0V
25
125
1.2
Starting T J , Junction Temperature (°C)
150
1.4
50
75
100
TOP
BOTTOM
Fig 13. Typical Threshold Voltage vs. Junction
1000
2.5
2.0
1.5
1.0
0.01
125
100
0.1
10
1
-75
3.0A
4.3A
9.6A
I D
0.1
T A = 25°C
Tj = 150°C
Single Pulse
-50
Fig11. Maximum Safe Operating Area
150
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature ( °C )
-25
10msec
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Temperature
0
1.0
25
100µsec
50
1msec
I D = 250µA
10.0
75
100 125
100.0
150
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