IRF6635 International Rectifier, IRF6635 Datasheet - Page 8

• Manufacturer Part Number: IRF6635
• Description: MOSFET N-CH 30V 32A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6635

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5970pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DirectFET™ Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET™ Part Marking
IRF6635
8
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MIN
1.38
6.25
4.80
3.85
0.35
0.68
0.68
0.80
0.38
0.88
2.28
0.48
0.03
0.08
METRIC
DIMENSIONS
MAX
1.42
1.01
6.35
5.05
3.95
0.45
0.72
0.72
0.84
0.42
2.41
0.59
0.08
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.019
0.001
0.003
MIN
IMPERIAL
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.023
0.003
0.007
MAX
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