IRF6635 International Rectifier, IRF6635 Datasheet - Page 5

• Manufacturer Part Number: IRF6635
• Description: MOSFET N-CH 30V 32A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6635

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 71nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5970pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 12. Maximum Drain Current vs. Case Temperature
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Fig 10. Typical Source-Drain Diode Forward Voltage
1000
200
175
150
125
100
100
75
50
25
10
0
1
0
25
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
75
Fig 14. Maximum Avalanche Energy vs. Drain Current
100
T J = 150°C
T J = 25°C
T J = -40°C
900
800
700
600
500
400
300
200
100
0
V GS = 0V
25
125
Starting T J , Junction Temperature (°C)
50
150
75
100
1000
Fig 13. Threshold Voltage vs. Temperature
100
TOP
BOTTOM 25A
0.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
Fig11. Maximum Safe Operating Area
1
0.01
-75 -50 -25
125
T A = 25°C
T J = 150°C
Single Pulse
I D
9.1A
11A
V DS , Drain-to-Source Voltage (V)
0.10
150
OPERATION IN THIS AREA
LIMITED BY R DS (on)
I D = 250µA
T J , Temperature ( °C )
0
100msec
25
1.00
10msec
50
1msec
100µsec
75 100 125 150
10.00
IRF6635
100.00
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