STW18NK80Z STMicroelectronics, STW18NK80Z Datasheet - Page 6

• Manufacturer Part Number: STW18NK80Z
• Description: MOSFET N-CH 800V 19A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW18NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 6100pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4423-5

Electrical characteristics
6/14
Table 7.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
V
(see
I
V
(see
SD
SD
SD
DD
DD
= 19A, V
= 18A, di/dt = 100A/µs,
= 18A, di/dt = 100A/µs,
= 40V, T
= 40V, T
Figure
Figure
Test conditions
15)
15)
GS
j
j
= 25°C
= 150°C
= 0
Min.
1160
Typ.
25.8
920
11
24
15
STW18NK80Z
Max.
1.6
19
76
Unit
µC
µC
ns
ns
A
A
V
A
A