STP40N20 STMicroelectronics, STP40N20 Datasheet - Page 3

MOSFET N-CH 200V 40A TO-220

STP40N20

Manufacturer Part Number
STP40N20
Description
MOSFET N-CH 200V 40A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP40N20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
24 ns
Minimum Operating Temperature
- 55 C
Rise Time
44 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4380-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP40N20
Manufacturer:
ST
Quantity:
25 000
Part Number:
STP40N20
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP40N20
Manufacturer:
ST
0
STB40N20 - STP40N20 - STP40N20FP - STW40N20
1
Electrical ratings
Table 1.
1. Value limited by wire bonding
2. Pulse width limited by safe operating area.
3. I
Table 2.
1. for 10 sec. 1.6mm from case
Table 3.
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Symbol
Symbol
dv/dt
SD
E
I
T
I
AR
V
DM
AS
V
I
I
V
T
P
J
D
D
≤ 40A, di/dt ≤ 200A/µs, V
ISO
T
GS
DS
stg
tot
(1)
(1)
j
(2)
(3)
Maximum lead temperature for soldering
purpose
Avalanche Current, Repetitive or Not-
Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1s; Tc = 25°C)
Storage temperature
Max. operating junction temperature
(1)
j
= 25 °C, I
DD
Parameter
≤ V
(BR)DSS
Parameter
D
= I
C
j
max)
AR
= 25°C
, Tj ≤ T
GS
, V
= 0)
DD
JMAX
= 50 V)
C
C
= 25°C
= 100°C
TO-220
D
62.5
2
PAK
TO-220
TO-247
D
1.28
0.78
2
160
12
PAK
--
Max Value
TO-247
-55 to 150
300
230
Value
50
40
± 20
200
160
40
25
TO-220FP
Electrical ratings
2500
0.32
TO-220FP
40
62.5
3.1
W/°C
Unit
V/ns
°C/W
°C/W
°C
Unit
W
V
V
A
A
A
V
mJ
°C
A
3/18

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