STP5NK90Z STMicroelectronics, STP5NK90Z Datasheet - Page 4

• Manufacturer Part Number: STP5NK90Z
• Description: MOSFET N-CH 900V 4.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 2.25A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 41.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1160pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4383-5

Electrical ratings
1.1
4/15
Protection features of gate-to-source zener diodes
Table 4.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
BV
GSO
Gate-Source breakdown
voltage
Gate-source zener diode
Parameter
Igs=±1mA
(Open drain)
Test conditions
STP5NK90Z - STF5NK90Z
Min
30
Typ.
Max
Unit
V