STP5NK90Z STMicroelectronics, STP5NK90Z Datasheet - Page 4

MOSFET N-CH 900V 4.5A TO-220

STP5NK90Z

Manufacturer Part Number
STP5NK90Z
Description
MOSFET N-CH 900V 4.5A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP5NK90Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 2.25A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
41.5nC @ 10V
Input Capacitance (ciss) @ Vds
1160pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4383-5

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Electrical ratings
1.1
4/15
Protection features of gate-to-source zener diodes
Table 4.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
BV
GSO
Gate-Source breakdown
voltage
Gate-source zener diode
Parameter
Igs=±1mA
(Open drain)
Test conditions
STP5NK90Z - STF5NK90Z
Min
30
Typ.
Max
Unit
V

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