STB80NF55-08-1 STMicroelectronics, STB80NF55-08-1 Datasheet - Page 3

• Manufacturer Part Number: STB80NF55-08-1
• Description: MOSFET N-CH 55V 80A I2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80NF55-08-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3516-5

ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Table 9: SWITCHING OFF
Table 10: SOURCE DRAIN DIODE
(*)
(
Figure 3: Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
I
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 17)
V
V
R
(Resistive Load, Figure 17)
I
I
V
(see test circuit, Figure 19)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 80 A
= 80 A
= 30 V
= 44V I
= 30 V
= 25 V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
= 80 A V
Figure 4: Thermal Impedance
di/dt = 100A/µs
V
V
V
GS
GS
T
GS
j
I
I
= 150°C
D
D
= 10 V
= 0
GS
= 40 A
= 10 V
= 40 A
= 10V
STB80NF55-08/-1 STP80NF55-08
Min.
Min.
Min.
Typ.
Typ.
Typ.
245
115
6.4
25
85
24
46
70
25
80
Max.
Max.
Max.
155
320
1.5
80
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
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