IRF7834 International Rectifier, IRF7834 Datasheet - Page 5

• Manufacturer Part Number: IRF7834
• Description: MOSFET N-CH 30V 19A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7834

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3710pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7834

www.irf.com
0.001
0.01
100
0.1
10
20
16
12
Fig 9. Maximum Drain Current Vs.
1
8
4
0
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
Case Temperature
0.20
0.10
0.05
0.02
0.01
T J , Junction Temperature (°C)
50
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
0.0001
100
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
0.01
Fig 10. Threshold Voltage Vs. Temperature
i/Ri
R
2.2
1.8
1.4
1.0
1
R
1
-75
τ
2
R
τ
2
2
R
-50
2
0.1
-25
R
τ
3
3
R
τ
T J , Temperature ( °C )
3
3
0
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
R
4
τ
4
R
4
1
25
4
τ
C
τ
Ri (°C/W)
50
1.1659
9.9439
25.520
13.380
IRF7834
75
I D = 250µA
10
100
0.000184
0.153919
1.7486
49
τi (sec)
125 150
5
100