IRF7834 International Rectifier, IRF7834 Datasheet - Page 3

• Manufacturer Part Number: IRF7834
• Description: MOSFET N-CH 30V 19A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7834

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3710pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7834

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1000.00
1000
Fig 3. Typical Transfer Characteristics
100.00
Fig 1. Typical Output Characteristics
100
0.1
10.00
10
1.00
0.10
0.01
1
0.1
2.0
V DS , Drain-to-Source Voltage (V)
T J = 150°C
V GS , Gate-to-Source Voltage (V)
T J = 25°C
1
2.5V
> 60µs PULSE WIDTH
Tj = 25°C
V DS = 10V
> 60µs PULSE WIDTH
3.0
10
TOP
BOTTOM 2.5V
VGS
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
100
4.0
1.5
1.0
0.5
1000
Fig 2. Typical Output Characteristics
100
10
Fig 4. Normalized On-Resistance
1
-60 -40 -20
0.1
I D = 20A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Vs. Temperature
0
20
2.5V
1
40
> 60µs PULSE WIDTH
Tj = 150°C
60
IRF7834
80 100 120 140 160
10
TOP
BOTTOM 2.5V
VGS
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
3
100