STW26NM60 STMicroelectronics, STW26NM60 Datasheet - Page 3

• Manufacturer Part Number: STW26NM60
• Description: MOSFET N-CH 600V 30A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 135 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 102nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3265-5

Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
C
V
OSS eq
Symbol
Symbol
Symbol
I
V
V
R
SDM
(BR)DSS
g
oss eq.
t
t
I
I
I
I
C
SD
C
GS(th)
C
Q
DS(on
fs
d(on)
d(off)
Q
RRM
RRM
GSS
DSS
I
Q
Q
Q
SD
t
t
oss
t
t
rss
iss
rr
rr
gd
r
gs
(1)
f
rr
rr
g
(1)
(2)
(3)
is defined as a constant equivalent capacitance giving the same charging time as C
.
Drain-source Breakdown
Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
D
DS
DS
GS
DS
GS
= 250 µA, V
V
V
V
V
V
R
(see Figure 15)
V
V
(see Figure 18)
I
I
V
(see Figure 16)
I
V
(see Figure 16)
SD
SD
SD
= Max Rating
= Max Rating, T
= V
= ± 20 V
= 10 V, I
DS
DS
GS
GS
DD
DD
GS
DD
DD
G
= 4.7
Test Conditions
= 26 A, V
= 26 A, di/dt = 100 A/µs
= 26 A, di/dt = 100 A/µs
GS
= 15 V , I
= 25 V, f = 1 MHz,
= 0
= 0 V, V
= 300 V, I
= 480 V, I
= 10 V
= 100V
= 100V, T
Test Conditions
Test Conditions
, I
D
D
GS
= 250 µA
= 13 A
V
DS
GS
D
GS
= 0
D
D
j
= 150°C
= 13 A
= 0 to 400 V
= 13 A,
= 26 A,
= 0
C
= 10 V
= 125°C
Min.
Min.
Min.
600
oss
3
when V
DS
0.125
2900
Typ.
Typ.
Typ.
30.5
32.5
900
300
450
560
20
40
35
22
14
20
73
20
37
increases from 0 to 80% V
4
7
9
STW26NM60
0.135
Max.
Max.
Max.
± 10
100
102
104
1.5
10
26
5
Unit
Unit
Unit
nC
nC
nC
µC
µC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
3/9
DSS
.