IRF620 STMicroelectronics, IRF620 Datasheet - Page 4

• Manufacturer Part Number: IRF620
• Description: MOSFET N-CH 200V 6A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of IRF620

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3135

Electrical characteristics
2
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
C
I
I
C
DS(on)
C
Q
GS(th)
d(on)
Q
DSS
GSS
fs
Q
oss
t
iss
rss
gs
gd
r
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on Delay Time
Rise Time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
I
V
V
R
(see Figure 14)
V
V
I
V
V
V
V
V
D
D
GS
DS
DS
DD
DD
GS
GS
G
DS
DS
DS
= 3A
= 250 µA, V
= 4.7Ω, V
=160V, I
= V
= 10V, I
> I
=25V, f=1 MHz, V
=10V
= Max rating,
= Max rating @125°C
= ±20V
= 100V, I
Test conditions
Test conditions
D(on)
GS
, I
D
D
x R
D
= 3A
GS
D
= 250µA
= 6A
GS
= 3A,
DS(on)max,
= 10V
= 0
GS
=0
Min.
200
2
Min. Typ. Max.
Typ.
IRF620 - IRF620FP
0.6
3
350
1.5
4.5
7.5
70
35
18
30
19
±
Max.
0.8
50
100
1
4
27
Unit
Unit
µA
µA
nA
nC
nC
nC
V
V
pF
pF
pF
Ω
ns
ns
S