STW11NB80 STMicroelectronics, STW11NB80 Datasheet - Page 5

• Manufacturer Part Number: STW11NB80
• Description: MOSFET N-CH 800V 11A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW11NB80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2789-5

STW11NB80
Normalized Gate Threshold Voltage vs
Normalized On Resistance vs Temperature
Temperature
Source-drain Diode Forward Characteristics
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