IRFP460 STMicroelectronics, IRFP460 Datasheet

MOSFET N-CH 500V 18.4A TO-247

IRFP460

Manufacturer Part Number
IRFP460
Description
MOSFET N-CH 500V 18.4A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of IRFP460

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
18.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
128nC @ 10V
Input Capacitance (ciss) @ Vds
2980pF @ 25V
Power - Max
220W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2734-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP460
Manufacturer:
HARRIS
Quantity:
6 000
Part Number:
IRFP460
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFP460
Quantity:
1 000
Part Number:
IRFP460A
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFP460A
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFP460APBF
Manufacturer:
HITACHI
Quantity:
1 000
Part Number:
IRFP460APBF
Manufacturer:
IR
Quantity:
1 500
Part Number:
IRFP460APBF
Manufacturer:
VISHAY
Quantity:
150
Part Number:
IRFP460APBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFP460APBF
0
Company:
Part Number:
IRFP460APBF
Quantity:
2 400
Company:
Part Number:
IRFP460APBF
Quantity:
8 000
Part Number:
IRFP460BPBF
Manufacturer:
on
Quantity:
1 000
Part Number:
IRFP460C
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFP460C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
IRFP460LC
Manufacturer:
IR
Quantity:
20 000
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
May 2001
IRFP460
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
SWITH MODE LOW POWER SUPPLIES
(SMPS)
HIGH CURRENT, HIGH SPEED SWITCHING
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
Symbol
dv/dt(1)
I
V
DM
P
V
V
T
DGR
I
I
TOT
T
GS
stg
DS
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.22
500V
V
II is the evolution of the first
DSS
< 0.27
R
DS(on)
C
™.
GS
Parameter
= 25°C
N-CHANNEL 500V - 0.22 - 18.4A TO-247
GS
= 20 k )
The layout re-
= 0)
C
C
= 25°C
= 100°C
18.4A
I
D
(1)I
SD
18.4A, di/dt 100A/µs, V
INTERNAL SCHEMATIC DIAGRAM
PowerMesh™II MOSFET
–65 to 150
TO-247
Value
18.4
73.6
1.75
11.6
500
500
±30
220
150
3.5
DD
V
(BR)DSS
1
IRFP460
2
, T
3
j
T
JMAX.
W/°C
Unit
V/ns
°C
°C
W
V
V
V
A
A
A
1/8

Related parts for IRFP460

IRFP460 Summary of contents

Page 1

... N-CHANNEL 500V - 0.22 - 18.4A TO-247 R I DS(on) D 18.4A ™. The layout re- Parameter = 25° 100° 25°C C (1)I 18.4A, di/dt 100A/µ IRFP460 PowerMesh™II MOSFET TO-247 INTERNAL SCHEMATIC DIAGRAM Value 500 500 ±30 18.4 11.6 73.6 220 1.75 3.5 –65 to 150 150 ...

Page 2

... IRFP460 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Avalanche Current, Repetitive or Not-Repetitive I AR (pulse width limited by T Single Pulse Avalanche Energy E AS (starting ° ...

Page 3

... Test Conditions V = 400V 20A 4 10V G GS (see test circuit, Figure 5) Test Conditions Min 18.4A 20A, di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedence IRFP460 Typ. Max. Unit 128 nC 14.7 nC 41.7 nC Min. Typ. Max. Unit Typ. Max. Unit 18 ...

Page 4

... IRFP460 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature IRFP460 5/8 ...

Page 6

... IRFP460 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... IRFP460 inch TYP. MAX. 0.20 0.10 0.03 0.05 0.11 0.07 0.09 0.13 0.43 0.62 0.79 0.17 0.72 0.58 1.36 0.21 0.11 5º 60º ...

Page 8

... IRFP460 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

Related keywords