IRFP460 STMicroelectronics, IRFP460 Datasheet
![MOSFET N-CH 500V 18.4A TO-247](/photos/5/30/53058/to-247_sml.jpg)
IRFP460
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IRFP460 Summary of contents
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... N-CHANNEL 500V - 0.22 - 18.4A TO-247 R I DS(on) D 18.4A ™. The layout re- Parameter = 25° 100° 25°C C (1)I 18.4A, di/dt 100A/µ IRFP460 PowerMesh™II MOSFET TO-247 INTERNAL SCHEMATIC DIAGRAM Value 500 500 ±30 18.4 11.6 73.6 220 1.75 3.5 –65 to 150 150 ...
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... IRFP460 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Thermal Resistance Case-sink Typ T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Avalanche Current, Repetitive or Not-Repetitive I AR (pulse width limited by T Single Pulse Avalanche Energy E AS (starting ° ...
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... Test Conditions V = 400V 20A 4 10V G GS (see test circuit, Figure 5) Test Conditions Min 18.4A 20A, di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedence IRFP460 Typ. Max. Unit 128 nC 14.7 nC 41.7 nC Min. Typ. Max. Unit Typ. Max. Unit 18 ...
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... IRFP460 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature IRFP460 5/8 ...
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... IRFP460 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... IRFP460 inch TYP. MAX. 0.20 0.10 0.03 0.05 0.11 0.07 0.09 0.13 0.43 0.62 0.79 0.17 0.72 0.58 1.36 0.21 0.11 5º 60º ...
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... IRFP460 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...