IRF820 STMicroelectronics, IRF820 Datasheet - Page 8

• Manufacturer Part Number: IRF820
• Description: MOSFET N-CH 500V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of IRF820

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 315pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2733-5

Test circuit
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Figure 12. Unclamped Inductive load test
Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
circuit
resistive load
switching and diode recovery times
Test circuit
Figure 13. Unclamped inductive waveform
Figure 15. Gate charge test circuit
IRF820