IRF840 STMicroelectronics, IRF840 Datasheet - Page 3

• Manufacturer Part Number: IRF840
• Description: MOSFET N-CH 500V 8A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of IRF840

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 832pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2731-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
Q
d(on)
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7
= 4.7
= 8 A, V
= 7 A, di/dt = 100A/µs
= 250 V, I
= 400V, I
= 10V
= 100V, T
= 400V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
GS
D
D
D
j
Thermal Impedence
= 0
= 150°C
= 7 A,
= 7 A,
= 10 V
= 3.5 A
= 10V
Min.
Min.
Min.
Typ.
29.6
13.9
Typ.
Typ.
11.8
384
4.9
2.2
10
21
19
9
9
Max.
Max.
Max.
1.6
39
32
8
IRF840
Unit
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
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