STP3NB100 STMicroelectronics, STP3NB100 Datasheet - Page 3

• Manufacturer Part Number: STP3NB100
• Description: MOSFET N-CH 1KV 3A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STP3NB100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2641-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
r(Voff)
Q
SD
d(on)
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
rr
g
(2)
(1)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7
= 4.7
= 3 A, V
= 3 A, di/dt = 100A/µs,
= 500 V, I
= 800V, I
= 10V
= 100V, T
= 800V, I
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
GS
D
D
D
j
= 0
= 150°C
= 3 A,
= 3 A,
= 10 V
= 1.5 A
= 10V
Min.
Min.
Min.
Typ.
10.5
Typ.
Typ.
580
2.9
18
12
22
10
22
28
30
6
STP3NB100/FP
Max.
Max.
Max.
1.6
30
12
3
Unit
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
3/7