IRF7326D2 International Rectifier, IRF7326D2 Datasheet - Page 4

• Manufacturer Part Number: IRF7326D2
• Description: MOSFET P-CH 30V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7326D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Continuous Drain (id) @ 25° C: -

IRF7326D2
4
1 0 0
1 0 0 0
0.1
1 0
8 0 0
6 0 0
4 0 0
2 0 0
1
0.0
0
1
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
-V
-V
Drain-to-Source Voltage
0.3
S D
D S
V
C
C
C
, S ource-to-D rain Vo ltage (V )
Forward Voltage
G S
iss
rs s
o s s
, Drain -to -S ource V oltage (V )
C
C
T = 1 5 0°C
C
J
iss
o ss
rss
= 0V ,
= C
= C
= C
0.6
g s
g d
d s
+ C
+ C
1 0
g d
g d
f = 1M H z
0.9
T = 25 °C
J
, C
Power Mosfet Characteristics
d s
S H O R T E D
1.2
V
G S
= 0 V
1.5
1 0 0
A
A
Fig 8. Maximum Safe Operating Area
100
2 0
1 6
1 2
10
8
4
0
1
0
1
I
V
D
T
T
Single Pulse
D S
C
J
Fig 6. Typical Gate Charge Vs.
= -3.0A
= 25 C
= 150 C
= -24 V
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
DS
°
Q , Total G ate C harge (nC )
5
°
G
, Drain-to-Source Voltage (V)
1 0
BY R
10
DS(on)
FO R TE S T C IR C U IT
1 5
S E E FIG U R E 12
www.irf.com
100us
1ms
10ms
2 0
100
2 5
A