IRF7326D2 International Rectifier, IRF7326D2 Datasheet - Page 2

• Manufacturer Part Number: IRF7326D2
• Description: MOSFET P-CH 30V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7326D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Continuous Drain (id) @ 25° C: -

IRF7326D2
MOSFET Electrical Characteristics @ T
MOSFET Source-Drain Ratings and Characteristics
Schottky Diode Electrical Specifications
Schottky Diode Maximum Ratings
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
If (av)
I
Vfm
Irm
Ct
dv/dt
Parameter
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
Parameter
I
I
V
t
Q
SM
DSS
GSS
d(on)
d(off)
S
SM
rr
r
f
fs
(BR)DSS
DS(on)
GS(th)
SD
iss
oss
rss
2
g
gs
gd
rr
Max. Average Forward Current
Max. Forward voltage drop
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. peak one cycle Non-repetitive
Surge current
Continuous Source Current (Body Diode) —
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Parameter
4900 V/µs
Max. Units
Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
0.77
0.79
0.30
-1.0
0.57
0.52
310
-30
200
2.5
2.8
1.8
—
37
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
20
J
= 25°C (unless otherwise specified)
0.073 0.10
0.13 0.16
53
66
mA
440
200
—
—
—
11
17
25
18
93
pF
—
—
—
—
—
—
—
—
—
—
A
V
A
-100
-1.0
-1.0
100
-2.5
-25
-29
2.9
9.0
80
99
—
—
—
25
—
—
—
—
—
—
—
Rated Vr
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5µs sine or 3µs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
Vr = 30V
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
nA
µA
ns
nC
pF
nC
V
V
S
ns
A
V
V
V
V
V
V
V
V
V
I
V
I
R
V
V
V
V
V
R
ƒ = 1.0MHz (see figure 5)
Conditions
Tj = 125°C
D
D
Tj = 25°C
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
Conditions
T
T
di/dt = 100A/µs
= -1.8A
= -1.8A
J
J
= 6.0
= 8.2
= V
= -24V, I
= -24V, V
= -24V, V
= -24V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V (see figure 6)
= -15V
= 0V
Conditions
= 25°C, I
= 25°C, I
GS
Conditions
.
, I
D
D
= -250µA
D
D
S
F
D
GS
GS
= -250µA
= -1.8A
= -1.8A
= -1.8A, V
= -1.8A
= -1.5A
= 0V
= 0V, T
Following any rated
with Vrrm applied
www.irf.com
J
GS
= 55°C
= 0V