IRF7726TR International Rectifier, IRF7726TR Datasheet - Page 4
![MOSFET P-CH 30V 7A MICRO8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7726TR
Manufacturer Part Number
IRF7726TR
Description
MOSFET P-CH 30V 7A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7726TR.pdf
(9 pages)
Specifications of IRF7726TR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
2204pF @ 25V
Power - Max
1.79W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7726TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7726
4
3200
2800
2400
2000
1600
1200
100
800
400
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0
0.0
1
Drain-to-Source Voltage
-V
T = 25 C
-V
J
SD
DS
Forward Voltage
1.5
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
C
C
C
iss
oss
rss
=
=
=
=
0V,
C
C
C
gs
gd
ds
3.0
+ C
+ C
10
f = 1MHz
T = 150 C
gd ,
gd
J
C
ds
4.5
°
V
SHORTED
GS
= 0 V
6.0
100
100
16
14
12
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
-7.0A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
10
DS
Q , Total Gate Charge (nC)
G
°
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
V
V
DS
DS
www.irf.com
40
10
=-24V
=-15V
50
1 00us
1 ms
1 0ms
100
60