IRF7726TR International Rectifier, IRF7726TR Datasheet - Page 2
![MOSFET P-CH 30V 7A MICRO8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7726TR
Manufacturer Part Number
IRF7726TR
Description
MOSFET P-CH 30V 7A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7726TR.pdf
(9 pages)
Specifications of IRF7726TR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
2204pF @ 25V
Power - Max
1.79W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7726TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7726
Source-Drain Ratings and Characteristics
Notes:
Electrical Characteristics @ T
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
R
I
rr
d(on)
r
d(off)
f
I
DSS
V
2
fs
SD
GSS
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
Repetitive rating; pulse width limited by
DS(on)
Pulse width
(BR)DSS
max. junction temperature.
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t < 10 sec.
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
–––
–––
–––
–––
––– 0.016 –––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2204 –––
–––
–––
-30
10
–––
–––
–––
–––
––– 0.026
––– 0.040
–––
–––
–––
–––
––– -100
–––
227
107
341
220
8.0
8.1
35
32
46
15
25
-1.2
-2.5
–––
–––
100
–––
–––
341
161
–––
–––
-28
-15
-25
-1.8
53
48
69
23
38
V/°C
µA
nA
nC
ns
pF
ns
V
V
V
S
A
C
MOSFET symbol
p-n junction diode.
T
T
di/dt = -100A/µs
showing the
integral reverse
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -7.0A
= -1.0A
= 25°C, I
= 25°C, I
= 15
= 6.0
= V
= -10V, I
= -24V, V
= -24V, V
= -15V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V, V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -1.8A, V
= -1.8A
D
GS
GS
GS
= -250µA
= -7.0A
= -7.0A
= -6.0A
= 0V
= 0V, T
= -10V
D
www.irf.com
= -1mA
GS
J
G
= 70°C
= 0V
S
D