IRF9530NL International Rectifier, IRF9530NL Datasheet - Page 5
![MOSFET P-CH 100V 14A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRF9530NL
Manufacturer Part Number
IRF9530NL
Description
MOSFET P-CH 100V 14A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9530NS.pdf
(11 pages)
Specifications of IRF9530NL
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9530NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9530NL
Manufacturer:
IR
Quantity:
12 500
14
12
10
0 . 0 1
8
6
4
2
0
0.1
1 0
0 . 0 0 0 0 1
25
1
Fig 9. Maximum Drain Current Vs.
D = 0 .5 0
0 .0 5
0 .2 0
0 .1 0
0 .0 2
0 .0 1
50
T , Case Temperature ( C)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
(T H E R M A L R E S P O N S E )
C
Case Temperature
S IN G L E P U L S E
75
0 . 0 0 0 1
100
125
t , R e c ta n g ula r P u lse D u ratio n (s e c )
°
1
150
0 . 0 0 1
175
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
0 . 0 1
R
Pulse Width
Duty Factor
G
-10V
t
V
d(on)
N o te s:
1 . D u ty fa c to r D = t
2. P e a k T = P
GS
V
IRF9530NS/L
DS
t
r
J
µs
D M
x Z
0.1
1
D.U.T.
/ t
th JC
2
P
R
D M
t
d(off)
D
+ T
C
t
1
t
t
f
2
+
-
V
DD
1
A