IRF9530NL International Rectifier, IRF9530NL Datasheet - Page 4
![MOSFET P-CH 100V 14A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRF9530NL
Manufacturer Part Number
IRF9530NL
Description
MOSFET P-CH 100V 14A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9530NS.pdf
(11 pages)
Specifications of IRF9530NL
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9530NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9530NL
Manufacturer:
IR
Quantity:
12 500
IRF9530NS/L
2 0 0 0
1 6 0 0
1 2 0 0
1 0 0
0.1
8 0 0
4 0 0
1 0
1
0.4
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
T = 15 0°C
J
-V
Drain-to-Source Voltage
0.6
-V
S D
D S
V
C
C
C
, S ourc e-to-D rain V oltage (V )
, D rain-to-S ourc e V oltage (V )
G S
iss
rs s
o ss
Forward Voltage
C
C
C
0.8
rss
iss
oss
= 0V ,
= C
= C
= C
g s
g d
ds
T = 2 5°C
J
1.0
+ C
+ C
1 0
g d
g d
f = 1 M H z
, C
1.2
d s
S H O R TE D
V
1.4
G S
= 0 V
1.6
1 0 0
A
A
1000
100
10
20
15
10
1
5
0
Fig 8. Maximum Safe Operating Area
1
0
T
T
Single Pulse
I =
D
C
J
Fig 6. Typical Gate Charge Vs.
= 25 C
= 175 C
-8.4A
-V
OPERATION IN THIS AREA LIMITED
10
DS
°
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
10
20
BY R
V
V
V
30
DS(on)
DS
DS
DS
FOR TEST CIRCUIT
= -80V
= -50V
= -20V
SEE FIGURE
100
40
10us
100us
1ms
10ms
50
13
1000
60