IRF7207 International Rectifier, IRF7207 Datasheet - Page 2
![MOSFET P-CH 20V 5.4A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7207
Manufacturer Part Number
IRF7207
Description
MOSFET P-CH 20V 5.4A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7207.pdf
(7 pages)
Specifications of IRF7207
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 5.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7207
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7207
Manufacturer:
IOR
Quantity:
20 000
Part Number:
IRF7207PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7207TRPBF
Manufacturer:
IR
Quantity:
20 000
Electrical Characteristics @ T
IRF7207
Source-Drain Ratings and Characteristics
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Notes:
R
I
d(on)
r
d(off)
f
DSS
I
S
SM
rr
V
fs
(BR)DSS
GS(th)
GSS
2
iss
oss
rss
g
gs
gd
SD
DS(on)
rr
(BR)DSS
Repetitive rating; pulse width limited by
Starting T
max. junction temperature.
R
G
= 25 , I
/ T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
= 25°C, L = 9.6mH
AS
= -5.4A.
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
I
Pulse width
When mounted on 1 inch square copper board, t<10 sec
T
––– -0.011 –––
–––
–––
-0.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
-20
8.3
–––
–––
–––
–––
SD
J
150°C
-5.4A, di/dt
–––
––– 0.06
––– 0.10
–––
–––
–––
––– -100
–––
780
410
200
–––
–––
2.2
5.7
–––
–––
15
11
24
43
41
42
50
–––
–––
-1.0
100
–––
–––
–––
–––
–––
–––
–––
–––
-1.0
-25
3.3
8.6
22
-43
-3.1
63
75
300µs; duty cycle
-79A/µs, V
V/°C
µA
nA
nC
ns
pF
nC
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz,
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
integral reverse
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
= -5.4A
= -1.0A
DD
= 25°C, I
= 25°C, I
= 6.0
= 10 ,
= 0V, I
= -4.5V, I
= -2.7V, I
= V
= -10V, I
= -16V, V
= -16V, V
= 12V
= -12V
= -10V
= -4.5V,
= -10V
= 0V
= -15V
2%.
V
GS
Conditions
(BR)DSS
, I
D
S
F
D
= -250µA
D
Conditions
D
D
= -3.1A, V
= -3.1A
GS
GS
= -250µA
= -5.4A
= -5.4A
= -2.7A
,
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 125°C
= 0V
G
D
S