IRF7207 International Rectifier, IRF7207 Datasheet

MOSFET P-CH 20V 5.4A 8-SOIC

IRF7207

Manufacturer Part Number
IRF7207
Description
MOSFET P-CH 20V 5.4A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7207

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 5.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7207

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7207
Manufacturer:
IOR
Quantity:
20 000
Company:
Part Number:
IRF7207
Quantity:
1 209
Part Number:
IRF7207PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7207TRPBF
Manufacturer:
IR
Quantity:
20 000
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Description
Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
V
E
dv/dt
T
R
D
D
DM
J,
DS
D
D
GS
GSM
AS
@ T
@ T
JA
Generation 5 Technology
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
@T
@T
T
STG
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
Peak Diode Recovery dv/dt ƒ
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
®
Power MOSFETs from
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
G
S
S
S
1
2
3
4
T op V ie w
Typ.
–––
HEXFET
8
7
6
5
-55 to + 150
Max.
0.02
-5.4
-4.3
± 12
140
-5.0
D
D
D
-20
-43
2.5
1.6
-16
D
A
SO-8
®
R
IRF7207
Power MOSFET
DS(on)
V
Max.
DSS
50
PD - 91879A
= -20V
= 0.06
Units
Units
W/°C
°C/W
V/ns
W
°C
V
A
V
V
1
6/5/00

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IRF7207 Summary of contents

Page 1

... J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET Max. @ -4. -4.5V GS 0.02 - 150 Typ. … ––– 91879A IRF7207 ® Power MOSFET -20V DSS 0.06 D DS(on) SO-8 Units -20 V -5.4 -4.3 A -43 2.5 W 1.6 W/°C ± -16 V 140 -5.0 V/ns °C Max ...

Page 2

... IRF7207 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 10 -2.25V ° 1 0.1 10 Fig 2. Typical Output Characteristics 2 1.5  ° 150 C J 1.0 0.5 = -10V 0.0 -60 -40 -20 5.0 6.0 Fig 4. Normalized On-Resistance IRF7207 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V -2.25V -2.25V  20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -5. ...

Page 4

... IRF7207  1600 1MHz iss rss oss ds gd 1200  C iss 800  C oss 400  C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100  ° 150 0.1 0.4 0.6 0.7 0.9 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 400 300 200 100 0 125 150 25 50 ° Starting T , Junction Temperature ( C) Fig 10. Maximum Avalanche Energy  Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7207  I D TOP -2.4A -4.3A BOTTOM -5.4A 75 100 125 150 ° J Vs. Drain Current  ...

Page 6

... IRF7207 SO-8 Package Details (. (. ( (. Part Marking ° (. ILLIM .05 32 .06 88 1 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3. .635 .22 84 .244 0 5.8 0 6.20 K .01 1 .01 9 0.2 8 ...

Page 7

... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 www.irf.com 0 CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 011 451 0111 Data and specifications subject to change without notice. 6/00 IRF7207 . . ...

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