IRLL2703 International Rectifier, IRLL2703 Datasheet - Page 4

• Manufacturer Part Number: IRLL2703
• Description: MOSFET N-CH 30V 3.9A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLL2703

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLL2703

IRLL2703
4
1000
800
600
400
200
100
0.1
10
0
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 150 C
J
V
V
DS
SD
Forward Voltage
V
C
C
C
0.6
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
C
C
C
°
iss
oss
rss
=
=
=
=
0V,
C
C
C
gs
gd
ds
T = 25 C
+ C
+ C
1.0
10
J
f = 1MHz
gd ,
gd
°
C
ds
1.4
SHORTED
V
GS
= 0 V
100
1.8
Fig 8. Maximum Safe Operating Area
100
15
12
10
9
6
3
0
1
0
0.1
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
Gate-to-Source Voltage
2.3A
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
°
°
G
4
, Drain-to-Source Voltage (V)
1
BY R
8
DS(on)
V
V
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
www.irf.com
= 24V
= 15V
10
12
100us
1ms
10ms
13
100
16