IRLL2703 International Rectifier, IRLL2703 Datasheet

MOSFET N-CH 30V 3.9A SOT223

IRLL2703

Manufacturer Part Number
IRLL2703
Description
MOSFET N-CH 30V 3.9A SOT223
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLL2703

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 3.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
2.4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
530pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLL2703

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Manufacturer
Quantity
Price
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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
I
I
I
I
P
P
V
E
I
E
dv/dt
T
R
R
D
D
D
DM
AR
J,
D
D
GS
AS
AR
@ T
@ T
@ T
JA
JA
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
@T
@T
T
STG
A
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Parameter
Parameter
GS
GS
GS
@ 10V**
@ 10V*
@ 10V*
G
Typ.
90
50
HEXFET
-55 to + 150
D
S
S O T -2 2 3
Max.
± 16
180
5.5
3.9
3.1
2.1
1.0
8.3
5.0
3.9
0.1
16
IRLL2703
®
R
Max.
DS(on)
Power MOSFET
120
60
V
I
DSS
D
= 3.9A
= 0.045
= 30V
PD - 91894
Units
mW/°C
Units
°C/W
V/ns
mJ
mJ
°C
W
W
A
V
A
1
6/15/99

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IRLL2703 Summary of contents

Page 1

... When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com HEXFET 10V 10V 10V 150 Typ 91894 IRLL2703 ® Power MOSFET V = 30V DSS R = 0.045 DS(on 3. Max. Units 5.5 3 ...

Page 2

... IRLL2703 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 10 1 ° 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = 25V 0.0 6.0 7.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRLL2703 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 2.7V 2.7V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 3.9A ...

Page 4

... IRLL2703 1000 1MHz iss rss 800 oss iss 600 C oss 400 C rss 200 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... RESPONSE) 0.1 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRLL2703 D.U. 5.0V Pulse Width µs Duty Factor d(on) ...

Page 6

... IRLL2703 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 500 1 5V 400 300 + 200 - A 100 0 25 Starting T , Junction Temperature ( Fig 12c. Maximum Avalanche Energy 12V V GS Fig 13b. Gate Charge Test Circuit ...

Page 7

... Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 TIO www.irf.com IRLL2703 ...

Page 8

... IRLL2703 Tape & Reel Information SOT-223 Outline (. (. (. (. & 330.0 0 (13.000 LIN WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl ...

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