IRF7467 International Rectifier, IRF7467 Datasheet - Page 6

• Manufacturer Part Number: IRF7467
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7467

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2530pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7467

IRF7467
I
A S
12V
Fig 15a&b. Unclamped Inductive Test circuit
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
6
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
0.020
0.019
0.018
0.017
0.016
0.015
0.014
0.013
0.012
0.011
0.010
.2 F
50K
3mA
t p
Current Sampling Resistors
.3 F
0
I
G
V
(B R )D S S
D.U.T.
I
D
and Waveforms
and Waveform
20
+
-
V
I D , Drain Current ( A )
DS
V
GS
R G
40
20 V
V D S
V
t p
G
Q
I A S
GS
D.U .T
60
0.0 1
L
VGS = 4.5V
VGS = 10V
Q
Charge
Q
GD
G
80
1 5 V
DRIVER
+
-
100
V D D
A
0.020
0.018
0.016
0.014
0.012
0.010
Fig 13. On-Resistance Vs. Gate Voltage
600
500
400
300
200
100
0
Fig 15c. Maximum Avalanche Energy
25
2.0
Starting T , Junction Temperature ( C)
4.0
V GS, Gate -to -Source Voltage (V)
50
Vs. Drain Current
6.0
J
I D = 11A
75
8.0
10.0
100
TOP
BOTTOM
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12.0
125
14.0
°
4.0A
7.2A
9.0A
I D
150
16.0