IRF7467 International Rectifier, IRF7467 Datasheet - Page 4

• Manufacturer Part Number: IRF7467
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7467

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2530pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7467

IRF7467
4
4000
3200
2400
1600
800
100
0.1
0
10
1
Fig 5. Typical Capacitance Vs.
1
0.3
Fig 7. Typical Source-Drain Diode
T = 150 C
Drain-to-Source Voltage
J
V
V
0.6
DS
SD
V
C
C
C
, Drain-to-Source Voltage (V)
Forward Voltage
°
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
0.9
C
C
=
=
=
=
C
rss
oss
T = 25 C
0V,
C
C
C
iss
J
gs
gd
ds
+ C
+ C
1.2
10
°
f = 1MHz
gd ,
gd
C
1.5
ds
SHORTED
V
GS
1.8
= 0 V
2.1
100
1000
100
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
9.0A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
Q , Total Gate Charge (nC)
DS
°
8
°
G
, Drain-to-Source Voltage (V)
1
16
BY R
DS(on)
24
V
V
DS
DS
www.irf.com
10
= 24V
= 15V
32
10us
100us
1ms
10ms
100
40