IRF7604TR International Rectifier, IRF7604TR Datasheet - Page 5

• Manufacturer Part Number: IRF7604TR
• Description: MOSFET P-CH 20V 3.6A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7604TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 590pF @ 15V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7604TR; IRF7604; IRF7604CT

100
0.1
10
0.00001
1
-
4.5
Fig 9b. Gate Charge Test Circuit
Fig 9a. Basic Gate Charge Waveform
D = 0.50
V
0.20
0.10
0.05
0.02
0.01
V
12V
G
V
GS
Same Type as D.U.T.
Q
Current Regulator
GS
.2 F
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
50K
-3mA
Current Sampling Resistors
.3 F
Charge
Q
Q
I
G
GD
G
D.U.T.
0.001
I
D
+
-
t , Rectangular Pulse Duration (sec)
V
1
DS
0.01
0.1
Fig 10b. Switching Time Waveforms
V
10%
90%
V
Fig 10a. Switching Time Test Circuit
GS
DS
R
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
-4.5
V
t
GS
d(on)
V
V
1
J
DS
t
r
µs
DM
x Z
1
thJA
D.U.T.
P
2
DM
+ T
10
A
t
t
d(off)
IRF7604
1
t
2
t
f
-
+
V
DD
100