IRF7604TR International Rectifier, IRF7604TR Datasheet - Page 4

• Manufacturer Part Number: IRF7604TR
• Description: MOSFET P-CH 20V 3.6A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7604TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 590pF @ 15V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7604TR; IRF7604; IRF7604CT

IRF7604
1 0 0
0.1
1200
1000
1 0
800
600
400
200
1
0.4
Fig 7. Typical Source-Drain Diode
0
1
Fig 5. Typical Capacitance Vs.
T = 150°C
J
-V
C
C
C
Drain-to-Source Voltage
-V
rs s
is s
o s s
S D
D S
Forward Voltage
0.6
, S ource-to-D rain V oltage (V )
V
C
C
C
, D rain-to-S ource V oltage (V )
G S
iss
rss
oss
= 0V ,
= C
= C
= C
gs
ds
gd
0.8
+ C
+ C
T = 25°C
10
J
gd
gd
f = 1M H z
, C
ds
1.0
S H O R TE D
V
G S
= 0V
1.2
100
A
A
100
Fig 8. Maximum Safe Operating Area
0.1
10
10
1
8
6
4
2
0
0.1
0
T
T
S ingle P ulse
I
V
D
A
J
D S
Fig 6. Typical Gate Charge Vs.
= -2.4A
= 25°C
= 150°C
= -16V
O P E R A TIO N IN TH IS A R E A LIM ITE D
-V
Gate-to-Source Voltage
D S
Q , Total G ate C harge (nC )
4
G
, D rain-to-S ource V oltage (V )
1
8
B Y R
D S (on)
FO R TE S T C IR C U IT
12
S E E FIG U R E 9
10
100µ s
1m s
10m s
16
100
20
A
A