IRF9530NS International Rectifier, IRF9530NS Datasheet - Page 6

• Manufacturer Part Number: IRF9530NS
• Description: MOSFET P-CH 100V 14A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9530NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9530NS

IRF9530NS/L
-10V
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
V
Fig 13a. Basic Gate Charge Waveform
I
A S
G
R G
-2 0 V
Q
V D S
GS
t p
I A S
D .U .T
t p
0 .0 1
L
Q
Charge
Q
GD
G
D R IV E R
V
(BR)DSS
1 5 V
V D D
A
700
600
500
400
300
200
100
0
Fig 12c. Maximum Avalanche Energy
25
Fig 13b. Gate Charge Test Circuit
12V
Starting T , Junction Temperature ( C)
V
GS
50
Same Type as D.U.T.
Current Regulator
.2 F
Vs. Drain Current
J
75
50K
-3mA
Current Sampling Resistors
.3 F
100
I
G
D.U.T.
125
TOP
BOTTOM
I
D
150
+
-
V
DS
-3.4A
-5.9A
-8.4A
°
I D
175