IRF9530NS International Rectifier, IRF9530NS Datasheet - Page 4

• Manufacturer Part Number: IRF9530NS
• Description: MOSFET P-CH 100V 14A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9530NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9530NS

IRF9530NS/L
2 0 0 0
1 6 0 0
1 2 0 0
1 0 0
0.1
8 0 0
4 0 0
1 0
1
0.4
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
T = 15 0°C
J
-V
Drain-to-Source Voltage
0.6
-V
S D
D S
V
C
C
C
, S ourc e-to-D rain V oltage (V )
, D rain-to-S ourc e V oltage (V )
G S
iss
rs s
o ss
Forward Voltage
C
C
C
0.8
rss
iss
oss
= 0V ,
= C
= C
= C
g s
g d
ds
T = 2 5°C
J
1.0
+ C
+ C
1 0
g d
g d
f = 1 M H z
, C
1.2
d s
S H O R TE D
V
1.4
G S
= 0 V
1.6
1 0 0
A
A
1000
100
10
20
15
10
1
5
0
Fig 8. Maximum Safe Operating Area
1
0
T
T
Single Pulse
I =
D
C
J
Fig 6. Typical Gate Charge Vs.
= 25 C
= 175 C
-8.4A
-V
OPERATION IN THIS AREA LIMITED
10
DS
°
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
10
20
BY R
V
V
V
30
DS(on)
DS
DS
DS
FOR TEST CIRCUIT
= -80V
= -50V
= -20V
SEE FIGURE
100
40
10us
100us
1ms
10ms
50
13
1000
60