IRF640N International Rectifier, IRF640N Datasheet - Page 6

• Manufacturer Part Number: IRF640N
• Description: MOSFET N-CH 200V 18A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF640N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1160pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF640N

IRF640N/S/L
www.irf.com
V
I
G
AS
Q
GS
R G
20V
V DS
t p
Charge
Q
Q
GD
G
t p
I AS
D.U.T
0.01 Ω
L
V
(BR)DSS
15V
DRIVER
+
- V DD
A
600
500
400
300
200
100
0
25
Starting T , Junction Temperature ( C)
12V
50
V
GS
Same Type as D.U.T.
Current Regulator
J
.2µF
75
50KΩ
3mA
100
Current Sampling Resistors
.3µF
I
G
125
TOP
BOTTOM
D.U.T.
150
I
D
4.4A
7.6A
I D
11A
°
+
6
-
V
175
DS