IRF640N International Rectifier, IRF640N Datasheet - Page 5
![MOSFET N-CH 200V 18A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF640N
Manufacturer Part Number
IRF640N
Description
MOSFET N-CH 200V 18A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF640NSTRR.pdf
(12 pages)
Specifications of IRF640N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
1160pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF640N
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Company
Part Number
Manufacturer
Quantity
Price
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www.irf.com
20
16
12
8
4
0
0.01
20
16
12
25
0.1
10
0.00001
8
4
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
50
C
T , Case Temperature ( C)
C
75
75
(THERMAL RESPONSE)
100
0.0001
SINGLE PULSE
100
125
125
°
150
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
175
175
V
V
90%
90%
10%
10%
V
V
0.01
DS
DS
GS
GS
1. Duty factor D = t / t
2. Peak T = P
t
t
Notes:
d(on)
d(on)
≤ 0.1 %
≤ 0.1 %
≤ 1
≤ 1
t
t
r
r
J
IRF640N/S/L
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
t
d(off)
d(off)
C
t
1
t
t
t
2
f
f
+
-
5
1